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The accuracy of the usual expression of the high-frequency semiconductor capacitance is investigated by means of a charge-analysis model which takes into account the minority carrier rearrangement within the inversion layer due to the ac signal. In the range of doping concentrations of practical interest, it is found that the errors never exceed 5 percent, even in the strong inversion region.
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Baccarani et al. (1974) studied this question.
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