The deposition of polycrystalline silicon films on substrates by gases has been characterized. Films were deposited at temperatures as low as 460°C with an as-deposited resistivity of with good step coverage in oxide trenches. The extracted activation energy for silicon deposition was 0.6 eV for temperatures between 490 and 580°C and boron concentration of compared with 0.2 eV for silicon deposition by for similar conditions. Silicon films deposited by are polycrystalline with low resistivities as-deposited at 460°C, whereas films deposited by are amorphous at deposition temperatures © 2004 The Electrochemical Society. All rights reserved.
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Herner et al. (2004) studied this question.
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