This paper describes two single-ended three-stage SiGe HBT distributed amplifiers employing constant-k filter sections, m-derived filter sections, and a metal or a deep-trench ground plane in the artificial transmission lines. The distributed amplifiers exhibit a measured passband of 100 MHz-50 GHz; they have a small die size (1.0/spl times/1.1 mm/sup 2/) and low power consumption (125 mW). The measured results demonstrate that distributed amplifiers in SiGe can be competitive with those in III-V processes.
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Aguirre et al. (2004) studied this question.
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