What question did this study set out to answer?

Investigate chemical changes on gallium arsenide (GaAs) surfaces treated by photochemical washing using Auger electron spectroscopy to evaluate passivation stability.

April 1, 1989Japanese Journal of Applied PhysicsOpen Access

AES Observation on the Photochemically Washed Surface of GaAs

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Authors

HOHaruhiro OigawaUniversity of Tsukuba JFJia-Fa FanUniversity of Tsukuba YNYasuo NannichiUniversity of Tsukuba

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Implication

Spectroscopic analysis reveals surface arsenic dynamics alter photoluminescence in gallium arsenide, indicating photochemical washing provides only temporary passivation.

Key Points

Investigate chemical changes on gallium arsenide (GaAs) surfaces treated by photochemical washing using Auger electron spectroscopy to evaluate passivation stability.
Prepared gallium arsenide (GaAs) wafer surfaces using photochemical washing (PCW).
Characterized surface oxide composition and elemental states using Auger electron spectroscopy (AES) alongside photoluminescence (PL) intensity monitoring.
Observed that initial improvements in photoluminescence intensity correspond directly to the removal of excess elemental arsenic from the surface oxide.
Demonstrated that photoluminescence degradation coincides with the reaccumulation of excess arsenic, showing that photochemical washing passivation is temporary and unreliable.

Cite This Study

Oigawa et al. (1989) studied this question.

synapsesocial.com/papers/6a96ed0f672df19136a6ddf7 https://doi.org/10.1143/jjap.28.l525

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Implication

Spectroscopic analysis reveals surface arsenic dynamics alter photoluminescence in gallium arsenide, indicating photochemical washing provides only temporary passivation.

AES Observation on the Photochemically Washed Surface of GaAs

Discussion

Member takes

Implication

Key Points

Cite This Study

AES Observation on the Photochemically Washed Surface of GaAs

Discussion

Member takes

Implication

Key Points

Cite This Study

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