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March 15, 1993Applied Physics Letters

Comparative influence of bias and nucleation layer thickness on the heteroepitaxial growth of InN on AlN-nucleated (111) silicon and (00.1) sapphire

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TKThomas J. KistenmacherJohns Hopkins UniversityWBWayne A. Bryden

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Kistenmacher et al. (1993) studied this question.

synapsesocial.com/papers/6a96ed7b23945b2448824664https://doi.org/10.1063/1.108740
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