The conductivity of pure and doped (Mo, Ti) V2O5 single crystals is measured along the three crystallographic directions in the temperature range 90 to 350° K. For T < 140° K, it is shown that conduction can be considered as a variable range hopping between defect levels, situated in the neighbourhood of the Fermi-level. From combined de and ac measurements, the concentration of localized states is found to be about 1019 cm−3. In the intermediate temperature range 140° K < T < 350° K, the observed anisotropy is explained assuming that conduction is due to hopping along vanadium chains. Attention is drawn to the influence of random potential fluctuations.
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Haemers et al. (1973) studied this question.
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