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December 1, 1993IEEE Transactions on Nuclear Science

Low temperature proton irradiation of GaAs MESFETs

G.J. Shaw M.A. Xapsos B. D. Weaver G.P. Summers

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Abstract

GaAs MESFETs and resistors were irradiated with 3 MeV protons at irradiation temperatures (T/sub IRR/) in the 100 K>

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Shaw et al. (1993) studied this question.

synapsesocial.com/papers/6a971a2865cd0d1d26bb8310 https://doi.org/10.1109/23.273538

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