Single- and multiple-energy Fe, Cr, and V ions were implanted into InGaAs. Annealing of the implanted InGaAs samples caused a redistribution of the implanted atoms, as determined by secondary ion mass spectrometry. Coimplantation of Fe with P did not prevent this redistribution. A transport equation calculation of Fe-implantation-induced stoichiometric disturbances in InGaAs was done. The lattice quality of implanted InGaAs was investigated by photoreflectance measurements. Fe-implanted InGaAs has a resistivity close to the intrinsic limit, whereas Cr- and V-implanted InGaAs have a lower resistivity than the unimplanted material.
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Gulwadi et al. (1991) studied this question.
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