8.5～11.1 GHz GaN Low-Noise Amplifier MMIC with 1 dB Gain Flatness

In this study, an 8.5～11.1 GHz low-noise amplifier monolithic microwave integrated circuit with a 1 dB gain flatness was designed and manufactured using the Electronics and Telecommunications Research Institute’s 0.2 μm GaN process technology. The first stage of the low-noise amplifier, having a three-stage cascade structure, was designed to optimize the noise figure and bandwidth using source degeneration with an inductor. The second and third stages were designed to secure gains and improve gain flatness. The 1 dB gain flatness in the 8.5～11.1 GHz band was realized as a 25～26 dB gain using short-circuit capacitors in the interstage between the second and third stages and output matching circuits and noise figure showed 1.86～2.01 dB.