Functional modeling of integrated injection logic—DC analysis

Dc analysis of integrated injection logic structures is performed. The analysis is bared on partitioning the basic I2L structure into injection and n-p-n transistor regions. One-dimensional approximation is assumed in obtaining the intrinsic and the extrinsic βuof the n-p-n transistor. The electric field in the epiregion has been considered and the analysis predicts the behavior of βuat an arbitrary current level. An effective efficiency λ for the injection region is also given. The results of the analysis are compared to practical measurements.