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December 22, 2005IEEE Electron Device Letters

Surface leakage currents in SiN/sub x/ passivated AlGaN/GaN HFETs

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Authors

WTW. S. TanDynex Semiconductor (United Kingdom)MUMichael J. UrenUniversity of BristolPHP.A. HoustonEngineering and Physical Sciences Research Council

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Tan et al. (2005) studied this question.

synapsesocial.com/papers/6a9773fb7356deac8e9d95e4https://doi.org/10.1109/led.2005.860383
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  4. 4The Effect of Surface Passivation and Illumination on the Device Properties of AlGaN/GaN HFETs2001 · 25 citations
  5. 5Small signal and power measurements of AlGaN/GaNHEMTwith SiN passivation2001 · 47 citations