Answers are grounded in this paper and cite their sources.
A new self-align technology suitable for fabrication of GaAs low-noise FET's and MMIC's is demonstrated. The present technology, which is based upon sidewall technology and pattern inversion technology, provides a negligible short-channel effect, a low-parasitic resistance and a well-controlled breakdown voltage, all of which are essentially required for high microwave performance. An experimental 0.5-µm gate FET fabricated using the new process exhibits a high transconductance such as 220 mS/mm and a low-noise figure such as 1.6 dB at 12 GHz.
No takes yet. Share an insight, caveat, or question.
Hagio et al. (1986) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: