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January 21, 2015Japanese Journal of Applied PhysicsOpen Access

Effects of process temperature during atomic layer deposition using water and ozone as oxidants on current–voltage characteristics of Al2O3/AlGaN/GaN high-electron-mobility transistors on Si substrates

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TKToshiharu KuboNagoya Institute of TechnologyJFJoseph J. FreedsmanNagoya Institute of TechnologyYYYusuke YoshidaHiroshima General Hospital

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Kubo et al. (2015) studied this question.

synapsesocial.com/papers/6a97806c44220fce7874b034https://doi.org/10.7567/jjap.54.020301
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