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April 23, 2007Applied Physics Letters

Effect of gate-source and gate-drain Si3N4 passivation on current collapse in AlGaN∕GaN high-electron-mobility transistors on silicon

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Authors

SAS. ArulkumaranNagoya UniversityGNGeok Ing NgAgency for Science, Technology and ResearchZLZ. H. LiuAnhui Sanlian University

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Arulkumaran et al. (2007) studied this question.

synapsesocial.com/papers/6a9780f255a55e94cce337c3https://doi.org/10.1063/1.2730748
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