The structural, electrical, and magnetic properties of epitaxial thin films of a Heusler compound Fe 2 VSi on (001) MgAl 2 O 4 and MgO substrates were investigated. Structural characterization revealed that the films on MgAl 2 O 4 (the lattice mismatch to Fe 2 VSi of 0.7%) were in tetragonally strained states, while the films on MgO (the lattice mismatch = 4.9%) were in relaxed strain states with a cubic lattice. Unstrained films on MgO exhibited an antiferromagnetic transition at 129 K, which is close to the bulk data. In contrast, strained films on MgAl 2 O 4 showed a significant enhancement in the antiferromagnetic transition temperature up to 193 K. These results could be attributed to the stabilization of antiferromagnetic ordering induced by epitaxial strain.
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Fukatani et al. (2009) studied this question.
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