The injection of hot carriers from Si into SiO₂ in various MOSFET structures is characterized via direct measurements of gate current. A method of mapping gate currents as a function of both gate and drain bias potentials is described. The deterioration of device parameters with hot-electron injection is also characterized, and it is proposed that the rate of aging is a function not only of the injection and trapping efficiencies, but also of the physical location of the trapped charge.
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Riko Radojcic (1984) studied this question.
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