Evolution of capture cross-section of radiation-induced interface traps in MOSFETs as studied by a rapid charge pumping technique

Using a rapid charge pumping technique, it was found that the mean capture cross-section of interface traps in MOSFETs sharply decreased immediately after irradiation. Further changes of the capture cross-section during subsequent relaxation depended on the gate bias during both irradiation and storage. Radiation dose dependence has also been investigated. Possible mechanisms and correlations between interface-trap density and capture cross-section are discussed.>