In this paper, inductive-load switching of a high-voltage lateral JFET (HV-LJFET) on 4H-SiC is investigated with a monolithically integrated driver and with an external driver for high-frequency, high-temperature applications. A new ldquocapacitor-coupledrdquo gate driver circuitry is proposed and optimized to utilize a standard MOS driver and enable fast switching speed without the need for a negative power supply. Switching times and losses of the silicon carbide (SiC) HV-LJFET are characterized under various driver conditions and device temperatures. The results reveal that the temperature-independent, high switching speed of the SiC LJFET makes it possible to hard-switch at 3 MHz, 200 V, 1.2 A, and 250degC with good efficiency, significantly higher than silicon devices with similar voltage ratings.
No takes yet. Share an insight, caveat, or question.
Sheng et al. (2009) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: