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January 5, 2009IEEE Electron Device Letters

High-Performance 0. 1- Gate AlGaN/GaN HEMTs on Silicon With Low-Noise Figure at 20 GHz

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Authors

HSHaifeng SunHarbin University of Science and TechnologyAAAndreas R. AltETH ZurichHBH. BenedickterETH Zurich

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Sun et al. (2009) studied this question.

synapsesocial.com/papers/6a979214618eaafe842d243ahttps://doi.org/10.1109/led.2008.2010339
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