GaN-On-Diamond HEMT Technology With T AVG = 176°C at P DC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging

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1. 1Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy2002 · 355 citations
2. 2AlGaN/GaN high-electron mobility transistors with low thermal resistance grown on single-crystal diamond (111) substrates by metalorganic vapor-phase epitaxy2011 · 102 citations
3. 3AlGaN/GaN heterostructure field-effect transistor model including thermal effects2000 · 58 citations