The near-infrared quantum efficiency of pin photodetectors based on a lattice-matched type-II InGaAs/GaAsSb absorption region has been measured. The quantum efficiencies for these devices are 80.2 and 57.8% at 1064 and 1550 nm, respectively. These results are comparable to the more commonly-used InGaAs/InP photodetectors.
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Yuan et al. (2011) studied this question.
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