Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
September 1, 1997Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Fabrication of one-dimensional nanowire structures utilizing crystallographic orientation in silicon and their conductance characteristics

View Full Paper
Ask AI
Bookmark
Share

Authors

HNHideo NamatsuNTT (Japan)SHS. HoriguchiAkita UniversityMNMasao NagaseTokushima University

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Namatsu et al. (1997) studied this question.

synapsesocial.com/papers/6a97acdd618eaafe842d2c1chttps://doi.org/10.1116/1.589356
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1A new theory for the anisotropic etching of silicon and some underdeveloped chemical micromachining concepts1990 · 55 citations
  2. 2Generalized many-channel conductance formula with application to small rings1985 · 3,283 citations
  3. 3Fabrication of thickness-controlled silicon nanowires and their characteristics1995 · 38 citations
  4. 4Phase coherence length of electron waves in narrow AlGaAs/GaAs quantum wires fabricated by focused ion beam implantation1989 · 93 citations
  5. 5Fabrication of a silicon quantum wire surrounded by silicon dioxide and its transport properties1994 · 71 citations