This paper describes the device, circuit design, and packaging technologies applicable to 40-Gb/s-class future lightwave communications systems. A 0.1-/spl mu/m gate InAlAs-InGaAs high electron mobility transistors (HEMTs) with InP recess etch stopper was adopted mainly for IC fabrication. Fabricated ICs demonstrate excellent data-multiplexing, demultiplexing, and amplifying operation at 10 Gb/s.
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Otsuji et al. (1997) studied this question.
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