We present the realization of a novel three-terminal electronic switch using phase-change (PC) chalcogenide material. This device subdivides a single PC switch into a parallel array of three-terminal subvias which are addressed with atomic-force-microscopy cantilever probes. This subdivision reduces the required switching current to acceptable levels. Vias of Ge50Sb50are demonstrated in this switch topology and are switched between high- and low-resistance states. The vias show an off/on resistance ratio of approximately 100×, which can be applied in radio-frequency switching applications. This dynamic range is 10× less than that observed in sheet films of this material, with the main loss being a reduction in resistivity between the sheet-film off-state and the device off-state. The device off -state resistivity is similar in the as-fabricated state and the reamorphized state.
No takes yet. Share an insight, caveat, or question.
Lo et al. (2009) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: