Metal-insulator-metal (MIM) capacitors are fabricated using sputtered HfO2with Ta and TaN for top and bottom electrodes, respectively. High-capacitance densities from 4.7 to 8.1 fF/μm2have been achieved while maintaining the leakage current densities around 1 × 10/sup -8/ A/cm2within the normal circuit bias conditions. A guideline for the insulator thickness and its dielectric constant has been obtained by analyzing the tradeoff between the linearity coefficient and the capacitance density.
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Kim et al. (2003) studied this question.
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