VPE of AlGaAs by the chloride transport method using separate Al and Ga metals has been demonstrated for the first time. AsCl3 instead of toxic AsH3 was used as the arsenic source. Mirror-like surfaces with growth rates of 1–2 µm/hr were obtained. Background doping levels range in the order of 1018 cm-3, probably due to the reaction between AlCl3 and the quartz reactor. Band-edge emissions were observed in the photoluminescence spectra.
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Hasegawa et al. (1988) studied this question.
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