An ion-sensitive field-effect transistor (ISFET) has been fabricated with silicon nitride as the gate to provide a pH-sensing membrane. Measurements of pH sensitivity, selectivity, hysteresis effect and long-term stability have been made. The pH sensitivity is 46 mV per pH. The chemical response to the K+ ion is higher than that for the Na+ ion for this device. The long-term drift is about 1 mV per hour after a ten-hour immersion. Results for an oxide gate ISFET are also shown for comparison.
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LIU et al. (1989) studied this question.
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