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We report molecular-beam-epitaxial growth of a new structure formed by monolayer doping the barrier of an Alₓ{Ga}_{1{{-}}x}$As-GaAs heterojunction. Our investigations of these structures include the quantum Hall effect and variable temperature mobility measurements, which reveal enhancements in interface densities are achievable along with very high mobility.
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Cunningham et al. (1988) studied this question.
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