Growth of high‐In‐content InGaN multiple quantum disk nanocolumns on Si(111) by RF plasma‐assisted molecular‐beam epitaxy

Self‐organized InxGa1–xN nanocolumns with high‐In‐contents of x = 0.86–1.0 and In0.86Ga0.14N/ In0.79Ga0.21N multiple quantum disk (MQD) nanocolumns were successfully grown on Si(111) substrates by rf plasma‐assisted molecular beam epitaxy. The InxGa1–xN nanocolumns showed room‐temperature photoluminescence (RT‐PL) emission and the emission peak wavelength varied from 1500 to 1920 nm with increasing In content from 0.86 to 1.0. The In0.86Ga0.14N/In0.79Ga0.21N MQD nanocolumns showed a satellite peak in X‐ray diffraction spectra that indicates the growth of a good periodic structure. RT‐PL emission was also observed and the emission peak wavelength shifted from 1450 to 1620 nm with changing In0.86Ga0.14N well layer thickness from 1.5 to 3.0 nm. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)