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The continuous-wave (cw) operation of m -plane InGaN-based blue (460 nm) laser diodes (LDs) has been achieved. The threshold current and the corresponding threshold current density were 40 mA and 5.0 kA/cm 2 , respectively, with a 459 nm lasing wavelength under cw operation. The electroluminescence peak wavelength shift in pulsed mode was only 10 nm (58 meV), from spontaneous emission (at 0.3 mA) to stimulated emission (at 32 mA), which is extremely small when compared with that of c -plane blue LDs. This is first clear experimental demonstration of the advantage in fabricating nonpolar InGaN-based LDs beyond the blue region.
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Kubota et al. (2007) studied this question.
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