Extension of the approximate two-dimensional electron gas formulation

The functional two-dimensional electron gas (2DEG) formalism employed in the analysis of modulation-doped field-effect transistors is extended to properly account for the bulk charge and to more accurately model sub- and near-threshold behavior. The implemented changes basically transform the functional formulation from an above-threshold formalism for lightly doped structures to one of additional utility which automatically approaches expected limits under widely divergent conditions. Sample computations of the surface carrier concentration, relevant energy level positionings, and the semiconductor depletion width as a function of surface potential and doping are also presented and examined. These computations exhibit the general utility of the extended theory and provide an indirect evaluation of the standard two-level 2DEG theory.