Transport properties of phosphorus-doped ZnO thin films

The doping behavior of phosphorus in ZnO thin films grown by pulsed laser deposition is examined. The transport properties of epitaxial ZnO films doped with 1–5 at. % P were characterized via room temperature Hall measurements. As-deposited films doped with phosphorus are highly conductive and n type. The origin of the shallow donor level appears to be either substitution of P on the Zn site or formation of a donor complex. Annealing these phosphorus-doped films significantly reduces the carrier density, transforming the transport from highly conducting to semi-insulating. These results indicate that the phosphorus-related donor defect is relatively unstable, and suggests the formation of a deep level upon annealing. The latter is consistent with phosphorus substitution on the O site yielding a deep level in the gap.