The AlInGaN back barrier effect on DC characteristics of AlGaN/GaN high electron mobility transistor

This is the authors' abstract. We don't add key points for this paper.

In this paper, we investigated the impact of thickness and mole fraction AlInGaN back barrier on the DC performance of AlGaN/GaN high electron mobility transistors (HEMTs) by numerical simulation. The simulations are performed using the hydrodynamic transport model (HD). The simulation results indicated that an inserted AlInGaN back barrier with increasing thickness and mole fraction could effectively confine the electron in the channel, resulting in a significant improvement of the channel current and transconductance. Additionally, the variation of conduction band offset and the increase of total number electron in the channel led to the threshold voltage moving toward a more negative value.