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March 1, 1989Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

Growth of InGaP on GaAs using gas-source molecular-beam epitaxy

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Authors

JQJ. H. QuigleyColorado State UniversityMHM. J. HafichSandia National Laboratories CaliforniaHLH. Y. LeeColorado State University

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Quigley et al. (1989) studied this question.

synapsesocial.com/papers/6a99df10fcbe6d77151d71bbhttps://doi.org/10.1116/1.584750
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