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A TEOS oxide deposited on the phosphorus in situ doped polysilicon annealed with RTA is shown to have good electrical characteristics such as a high breakdown field (>12 MV/cm), especially for the positive bias, and a large Qbd (26 Coul/cm/sup 2/). The improvement is believed to be due to the relatively smooth surface of the in situ doped polysilicon and the reduction of the trapping density by RTA.
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Kao et al. (1997) studied this question.
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