We report electrical characteristics of Ta2O5 films deposited by a simple electron beam gun evaporator. We describe thickness-dependent characteristics for films with thicknesses of 7–130 nm. An equivalent SiO2 thickness of 3.5–4.5 nm for films whose leakage current density at an electric field of 106 V/cm is lower than 10−7 A/cm2 is demonstrated.
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Mikhelashvili et al. (1999) studied this question.
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