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We have fabricated the low resistance ohmic contacts to p-type GaAs. Specific contact resistances as low as 7 × 10-7Ω.cm2have been obtained for contacts prepared by heat treating Zn/Pd/Au metallizations deposited on p-type epitaxial GaAs layers with an acceptor concentration of 1.5 × 1019cm-3. These contacts are reproducible, simple to fabricate, exhibit excellent adhesion, and have a uniformly smooth surface morphology.
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Brooks et al. (1985) studied this question.
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