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Experimental profiling reveals distinct photoluminescence variations in semi-insulating GaAs crystals, highlighting the direct influence of dislocations and native defects on homogeneity.
To study the homogeneity of semi‐insulating GaAs substrates, a 77 K photoluminescence profile measurement was attempted. Horizontal Bridgman (HB) and circular Czochralski (CZ) crystals were used for the experiments. Luminescence was spectrally resolved to a few bands, and the profiles of these bands were individually plotted along the same straight line on the substrates. The etch pit density profiles were measured for comparison with those of the photoluminescence bands. A wide‐ranging distribution with fine structures was obtained for near‐bandedge emission of the CZ crystals; however, the HB crystals with low dislocation densities showed relatively structureless profiles. The effect of dislocations and native defects on PL profiles is discussed.
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Kitahara et al. (1982) studied this question.
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