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MOS device characterization involves the extraction of parameters from electrical measurements. A nonuniform channel doping profile can make such characterization ambiguous since device parameters are usually based upon a uniform doping profile model. In this paper, we solve the one-dimensional Poisson's equation for several doping profiles and show the impact of a nonuniform doping profile on the threshold surface potential, threshold voltage, normal field mobility degradation, and transconductance.
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Booth et al. (1987) studied this question.
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