Efficient numerical simulation of the high-frequency MOS capacitance

An enhancement of the MOSCAP C-V simulation program that permits efficient evaluation of the high-frequency MOS capacitance, including inversion-charge-redistribution effects, is presented. The measured C-V characteristics of a buried-channel MOS structure have been modeled successfully using the modified MOSCAP program. It has been found that the neglect of inversion-charge rearrangement in response to the high-frequency ac signal leads to a significant underestimation of the semiconductor space-charge capacitance in strong inversion for the buried-channel device.