An antireflection coating was created for InP-based pin photodiodes using natural lithography with 100 nm-diameter SiO2 spheres. The surface showed a normal-incidence reflection of <5% for wavelengths from 900 to 2500 nm. Photodiodes with surface texturing showed an enhancement in quantum efficiency with no dark current degradation.
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Chen et al. (2012) studied this question.
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