Accelerated Superfilling Behavior and Suppressed Agglomeration of CEMOCVD Cu Film Using In Situ Plasma Treatment

We report the effect of preplasma treatment on the film planarity and superfilling properties of the chemically enhanced metallorganic chemical vapor deposition (CEMOCVD) Cu process. The void-free superfilling in a technology scheme has made it the process of choice for copper-interconnect formation. There was dramatic improvement in homogeneity and planarity using dual-frequency preplasma treatment. The high frequency/low in situ dual-frequency plasma treatment prior to low-temperature deposition of -treated CEMOCVD Cu film revealed improved planarity and homogeneous superfilling performance in feature size.