CH3OH Concentration and Total Pressure Dependence of Diamond Films Formed from CH3OH-H2 Mixed Gas by Magnet-Active Microwave Plasma Chemical Vapor Deposition

Diamond films were deposited by a magnetic-field-assisted microwave plasma from CH 3 OH-H 2 mixed gas at the pressure range from 0.1 Torr to 0.5 Torr and a CH 3 OH concentration of 17-100%. CH 3 OH concentration and total pressure dependence of the diamond films were examined. We observed that the deposition rate decreased and the quality of diamond films improved as the total pressure and the CH 3 OH concentration increased. Secondary ion mass spectroscopic analysis showed that the diamond films contain hydrogen in a concentration greater than 5×10 19 cm -3