An 8K B random-access memory chip using the one-device FET cell

Describes the design, fabrication, and testing of an 8192-b p-channel fully-functional random access memory. Novel features of this device are discussed. Among these are the following: inversion layer capacitor one-device cell; the use of a high speed buffer to maximize data transfer; and a minimization of cell pitch limitations through the use of a unique word system circuit design. Performance, power, and yields are also discussed.