This paper describes a new antiblooming concept employing localized and controlled charge removal from a photosite based on electron-hole recombination via interface traps. The concept can be applied to various types of CCD and CID devices, and is demonstrated on a490V × 581Hframe transfer virtual-phase CCD imager. Results of antiblooming experiments as well as experiments addressing some of the physical parameters of the electron-hole recombination process are given.
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Jaroslav Hynecek (1983) studied this question.
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