The generation of defect levels by moving α- and β-dislocations in n- and p-type InP and their influence on defect levels already present in undeformed material are investigated by deep level transient spectroscopy (DLTS). A model of the interaction between dislocations and 3d-metal impurity related complexes present in the material is proposed, according to which the complexes dissociate in the space charge tube of charged dislocations.
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Zozime et al. (1993) studied this question.
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