The fabrication of ZnTe light emitting diodes (LEDs) with thin film structure is reported. As a result of the reduced self-absorption, the output power of LED was greatly enhanced to approximately 45 µW at the wavelength of 557 nm under an injection current of 10 mA at room temperature in spite of simple homo-junction structure. The wall-plug efficiency is comparable to that obtained in the commercially available GaP LED.
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Tanaka et al. (2009) studied this question.
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