An InGaAsSb/InAsSbP double-heterostructure laser (λ=3.3 μm) with Gd-doped active region exhibited 6 W (35 A and 150 ns) of output power in pulsed mode at 78 K. The power, spectral, and electrical characteristics are presented, along with their temperature dependences.
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Aydaraliev et al. (2002) studied this question.
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