Formation of 2-D Arrays of Silicon Nanocrystals in Thin SiO[sub 2] Films by Very-Low Energy Si[sup +] Ion Implantation

Two‐dimensional (2‐D) arrays of silicon nanocrystals were fabricated in thermally grown films by ion implantation and subsequent thermal annealing. The nanocrystals characteristics (size, shape, and spatial distribution) as a function of the implanted dose and annealing conditions were investigated by transmission electron microscopy. The nanocrystals were located at a tunneling distance from the oxide surface. With increasing size, the nanocrystals changed from quasi‐spheres to faceted to platelets. With a reduction in the implantation dose and the annealing temperature, the size of the nanocrystals decreased, their size distribution became more narrow, while their spatial arrangement remained 2‐D.