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September 1, 1982Journal of The Electrochemical SocietyOpen Access

LPE Growth Techniques for Fabricating Abrupt Zinc‐ and Magnesium‐Doped p+‐n InGaAsP / InP Heterojunctions

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KTK. Tabatabaie‐AlaviRTX (United States)RMR. J. MarkunasRTI International CFClifton G. FonstadMassachusetts Institute of Technology

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Tabatabaie‐Alavi et al. (1982) studied this question.

synapsesocial.com/papers/6a9cc0b60207f2651f41802a https://doi.org/10.1149/1.2124374

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